^se-mi-dondudtoi lpioaucki, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 medium-power complementary silicon transistors . . . for use as output devices in complementary general purpose amplifier applica- tions. ? high dc current gain ? hpe = 4000 (typ) @ iq = 5.0 adc ? monolithic construction with built-in base-emitter shunt resistors maximum ratings rating collector-emitter voltage collector-base voltage emitter-base voltage collector current base current total device dissipation @ tc = 25c derate above 25c operating and storage junction temperature range symbol vceo vcb veb "c ib pd tj. tstg mj2500 MJ3000 60 60 mj2501 mj3001 80 80 5.0 10 0.2 150 0.857 -55 to + 200 unit vdc vdc vdc adc adc watts w/c c thermal characteristics characteristic thermal resistance, junction to case symbol 9jc max 1.17 pnp collector mj2500 9 1 1 **** . - k-" ! ~~^ | = 2.0 k =50 j "-^vw-a-^vw-h c em - n i i h i -> i j j tter npn MJ3000 mj3001 |- i i i i i l_ unit c/w coll c trj ^?^ ? 2.0k l-avw i-c = 50 .,^/vv-i < emu pnp mj2500 mj2501* npn MJ3000 mj3001* 10 ampere darlington power transistors complementary silicon 60-80 volts 150 watts (to-3) ector ) *~ ~l , l ?^ i i i ;; i i i -1 i j > fter figure 1. darlington circuit schematic nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors entourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mj2500 mj2501 mj3ooo mj3oo1 electrical characteristics (tc = 25c unless otherwise noted) | characteristic i symbol i | min | max | unit | off characteristics collector emitter breakdown voltageo ) mj2500, MJ3000 (ic = 100 madc, ib = o) mj2501, mj3001 collector-emitter leakage current (veb = 60 vdc, rbe = 1 .0 k ohm) mj2500, MJ3000 (veb = 80 vdc, rbe = 1 .0 k ohm) m j2501 , mj3001 (veb = 60 vdc. rbe = 1 .0 k ohm, tc = 1 50c) mj2500, MJ3000 (veb = 80 vdc, rbe = 1.0k ohm, tc = 150c) mj2501, mj3001 emitter cutoff current (vbe = 5.0 vdc, lc = 0) collector emitter leakage current (vce = 30 vdc, ib = 0) mj2500, MJ3000 (vce = 40 vdc, ib = 0) mj2501,mj3001 v(br)ceo 'cer iebo iceo 60 80 ? _ ? ? 1.0 1.0 5.0 5.0 2.0 1.0 1.0 vdc madc madc madc on characteristics(i) dc current gain (ic = 5.0 adc, vce = 3- vdc) collector-emitter saturation voltage (lc = 5.0 adc, ib = 20 madc) (lc = 10 adc, ib = 50 madc) base emitter voltage (lc = 5,0 adc, vce = 3.0 vdc) hfe vce(sat) vbe(on) 1000 ? ? ? 2.0 4.0 3.0 ? vdc vdc (1)pulsetest: pulse width < 300 (is, duty cycle < 2.0%. a ?? 00.13 (0.005)? | t|~q ?| y@ notes: 1. dimensioning and tolerancing per ansi y14.5m. 1982 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply dim a b c d f g h k l n q u v inches min 1.55c 0.250 0.038 0.055 max ref 1.050 0.335 0.043 0.070 0.430 bsc 0.215 bsc 0.440 0,480 0.665 bsc ? 0.830 0.151 0.165 1.187 bsc 0.131 0.188 millimeters min 39.37 ? 6.35 0.97 1.40 max ref 26.67 8.51 1.09 1.77 10.92 bsc 5.46 bsc 11.18 12.19 16.89 bsc 3.84 21.08 4.19 30. 15 bsc 3.33 4.77 style 1: pint base 2. emitter case: collector
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